sot-363 plastic-encapsulate transistors mmdt 9014 dual transistor (npn+npn) features z epitaxial planar die construction z complementary pnp type available(mmdt 9015 ) z ideal for medium power amplification and switching m a rking: tgl6 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (ta=25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit symbol para m eter value unit v cbo collector- base voltage 5 0 v v ceo collector-emitter voltage 45 v v ebo emitter-base voltage 5 v i c collector current -continuous 0. 1 a p c collector power dissipation 0.2 w t j junction temperature 150 t stg storage temperature -55 ~+ 15 0 sot-363 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 50 v collector-emitter breakdown voltage v (br)ceo i c =100 a, i b =0 45 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =50v, i e =0 0.1 a collector cut-off current i ceo v ce =35v, i b =0 0.1 a emitter cut-off current i ebo v eb =4v, i c =0 0.1 a dc current gain h fe v ce =5v, i c =1ma 300 400 collector-emitter saturation voltage v ce(sat) i c =100ma, i b =5ma 0.3 v base-emitter saturation voltage v be(sat) i c =100ma, i b =5ma 1 v base-emitter voltage v be v ce =5v,i c =2ma 0.58 0.7 v transition frequency f t v ce =5v,i c =10ma, f=30mhz 150 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 3.5 pf noise figure nf v ce =5v, i c =0.2ma, r g =2 k ? ,f=1khz 10 db 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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